Search results for "radiation physics"
showing 7 items of 7 documents
Mechanisms of Electron-Induced Single-Event Upsets in Medical and Experimental Linacs
2018
In this paper, we perform an in-depth analysis of the single-event effects observed during testing at medical electron linacs and an experimental high-energy electron linac. For electron irradiations, the medical linacs are most commonly used due to their availability and flexibility. Whereas previous efforts were made to characterize the cross sections at higher energies, where the nuclear interaction cross section is higher, the focus of this paper is on the complete overview of relevant electron energies. Irradiations at an electron linac were made with two different devices, with a large difference in feature size. The irradiations at an experimental linac were performed with varying en…
Mechanisms of Electron-Induced Single-Event Latchup
2019
In this paper, possible mechanisms by which electrons can induce single-event latchups in electronics are discussed. The energy deposition and the nuclear fragments created by electrons in silicon are analyzed in this context. The cross section enhancement effect in the presence of high-Z materials is discussed. First experimental results of electron-induced latchups are shown in static random access memory devices with low linear energy transfer thresholds. The radiation hardness assurance implications and future work are discussed.
Mechanisms of Electron-Induced Single Event Upsets in Medical and Experimental Linacs
2018
In this paper, we perform an in-depth analysis of the single-event effects observed during testing at medical electron linacs and an experimental high-energy electron linac. For electron irradiations, the medical linacs are most commonly used due to their availability and flexibility. Whereas previous efforts were made to characterize the cross sections at higher energies, where the nuclear interaction cross section is higher, the focus of this paper is on the complete overview of relevant electron energies. Irradiations at an electron linac were made with two different devices, with a large difference in feature size. The irradiations at an experimental linac were performed with varying en…
CERN IRRADIATION FACILITIES.
2017
CERN provides unique irradiation facilities for applications in dosimetry, metrology, intercomparison of radiation protection devices, benchmark of Monte Carlo codes and radiation damage studies to electronics.
High-Energy Electron-Induced SEUs and Jovian Environment Impact
2017
We present experimental evidence of electron-induced upsets in a reference European Space Agency (ESA) single event upset (SEU) monitor, induced by a 200-MeV electron beam at the Very energetic Electronic facility for Space Planetary Exploration in harsh Radiation environments facility at CERN. Comparison of experimental cross sections and simulated cross sections is shown and the differences are analyzed. Possible secondary contributions to the upset rate by neutrons, flash effects, and cumulative dose effects are discussed, showing that electronuclear reactions are the expected SEU mechanism. The ESA Jupiter Icy Moons Explorer mission, to be launched in 2022, presents a challenging radiat…
Robustness of radiation beam profile measurements
2023
In this master’s thesis, profile measurements of PTW Semiflex 3D and PTW Semiflex ionisation chambers in addition to IBA MatriXX matrix detector were compared to each other using different measurement set-ups. The ionisation chamber measure- ments were done in a water phantom in horizontal and vertical orientations. Using two different set-ups in the horizontal orientation. The first horizontal set-up used the current clinical quality assurance program in Tampere University Hospital with the wire of the chamber lying deep in the water phantom. The second horizontal measurements were done with more of the wire in the radiation field by having the wire closer to the surface of the water. Meas…
Mechanisms of Electron-Induced Single Event Latchup
2019
In this paper, possible mechanisms by which electrons can induce single-event latchups in electronics are discussed. The energy deposition and the nuclear fragments created by electrons in silicon are analyzed in this context. The cross section enhancement effect in the presence of high-Z materials is discussed. First experimental results of electron-induced latchups are shown in static random access memory devices with low linear energy transfer thresholds. The radiation hardness assurance implications and future work are discussed. peerReviewed